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TIPP31 Folha de dados(PDF) 2 Page - Power Innovations Ltd

Nome de Peças TIPP31
Descrição Electrónicos  NPN SILICON POWER TRANSISTORS
Download  6 Pages
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Fabricante Electrônico  POINN [Power Innovations Ltd]
Página de início  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIPP31 Folha de dados(HTML) 2 Page - Power Innovations Ltd

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TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
2
MAY 1989 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC =
5 mA
(see Note 4)
IB = 0
TIPP31
TIPP31A
TIPP31B
TIPP31C
40
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 40 V
VCE = 60 V
VCE = 80 V
VCE = 100 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
TIPP31
TIPP31A
TIPP31B
TIPP31C
0.2
0.2
0.2
0.2
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB = 0
IB = 0
TIPP31/31A
TIPP31B/31C
0.3
0.3
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC = 0
1
mA
hFE
Forward current
transfer ratio
VCE =
4 V
VCE =
4 V
IC =
1 A
IC =
2 A
(see Notes 4 and 5)
20
10
VCE(sat)
Collector-emitter
saturation voltage
IB = 375 mA
IC =
2 A
(see Notes 4 and 5)
1
V
VBE
Base-emitter
voltage
VCE =
4 V
IC =
2 A
(see Notes 4 and 5)
1.5
V
hfe
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3


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