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IRF7342PBF Folha de dados(PDF) 5 Page - International Rectifier

Nome de Peças IRF7342PBF
Descrição Electrónicos  HEXFET짰 Power MOSFET (VDSS = -55V , RDS(on) = 0.105廓)
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7342PBF Folha de dados(HTML) 5 Page - International Rectifier

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IRF7342PbF
www.irf.com
5
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
I =
D -3.1A
V
=-12V
DS
V
=-30V
DS
V
=-48V
DS
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
1
10
100
0
240
480
720
960
1200
-V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss


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