Parameter

Max.

Units

1.5

0.93

Pulsed Drain Current



12

Power Dissipation

3.1

Power Dissipation (PCB Mount)**

2..0

W

Linear Derating Factor

0.025

Linear Derating Factor (PCB Mount)**

0.017

W/°C

Gate-to-Source Voltage

-/+10

V

Single Pulse Avalanche Energy

‚

50

mJ

Avalanche Current



1.5

A

Repetitive Avalanche Energy



0.31

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.5

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

IRLL110PbF

PD - 95222

S

D

G

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The SOT-223 package is designed for surface-mount using

vapor phase, infra red, or wave soldering techniques. Its

unique package design allows for easy automatic pick-and-

place as with other SOT or SOIC packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of

grreater than 1.25W is possible in a typical surface mount

application.

04/27/04

Description

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Repetitive Avalanche Rated

l Logic-Level Gate Drive

l RDS(on)Specified at VGS= 4V & 5V

l Fast Switching

l Lead-Free

S O T -223

** When mounted on 1'' square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

Parameter

Typ.

Max.

Units

Junction-to-PCB

–––

40

Junction-to-Ambient. (PCB Mount)**

–––

60

Thermal Resistance

°C/W

Absolute Maximum Ratings

A

www.irf.com

1

Soldewring Temperature, for 10 seconds

300 (1.6mm from case)