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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRFZ48RSPBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRFZ48RSPBF Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFZ48RS/LPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = 72A Qrr Reverse Recovery Charge ––– 0.50 0.80 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 50* 290 A VDD = 25V, Starting T J = 25°C, L = 22µH RG = 25Ω, IAS = 72A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ISD ≤ 72A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.060 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.018 Ω VGS = 10V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 27 ––– ––– S VDS = 25V, ID = 43A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 110 ID = 72A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.1 ––– VDD = 30V tr Rise Time ––– 250 ––– ID = 72A td(off) Turn-Off Delay Time ––– 210 ––– RG = 9.1Ω tf Fall Time ––– 250 ––– RD = 0.34Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 2400 ––– VGS = 0V Coss Output Capacitance ––– 1300 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 190 ––– pF ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current * Current limited by the package, (Die Current = 72A) |
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