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FP40R12KE3G Folha de dados(PDF) 2 Page - eupec GmbH |
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FP40R12KE3G Folha de dados(HTML) 2 Page - eupec GmbH |
2 / 11 page Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Vorläufige Daten Preliminary data Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier min. typ. max. Durchlaßspannung forward voltage Tvj = 150°C, IF = 40 A VF - 1,2 - V Schleusenspannung threshold voltage Tvj = 150°C V(TO) - - 0,8 V Ersatzwiderstand slope resistance Tvj = 150°C rT - - 10,5 m Ω Sperrstrom reverse current Tvj = 150°C, VR = 1600 V IR - 2 - mA Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C RAA'+CC' - 4 - m Ω Transistor Wechselrichter/ Transistor Inverter min. typ. max. Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 40 A VCE sat - 1,8 2,3 V collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 40 A - 2,15 - V Gate-Schwellenspannung gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 1,5 mA VGE(TO) 5,0 5,8 6,5 V Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Cies - 2,5 - nF Kollektor-Emitter Reststrom collector-emitter cut off current VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 400 nA Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm td,on - 85 - ns VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 90 - ns Anstiegszeit (induktive Last) IC = INenn, VCC = 600 V rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm tr - 30 - ns VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 45 - ns Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm td,off - 420 - ns VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 520 - ns Fallzeit (induktive Last) IC = INenn, VCC = 600 V fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 27 Ohm tf - 65 - ns VGE = ±15V, Tvj = 125°C, RG = 27 Ohm - 90 - ns Einschaltverlustenergie pro Puls IC = INenn, VCC = 600 V turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 27 Ohm Eon - 6 - mWs LS = 45 nH Abschaltverlustenergie pro Puls IC = INenn, VCC = 600 V turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 27 Ohm Eoff - 4,2 - mWs LS = 45 nH Kurzschlußverhalten tP ≤10µs, VGE ≤15V, RG = 27 Ohm SC Data Tvj≤125°C, VCC = 720 V ISC - 160 - A 2(11) DB-PIM-IGBT3_1.xls |
Nº de peça semelhante - FP40R12KE3G |
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Descrição semelhante - FP40R12KE3G |
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