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IRF1302PBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF1302PBF
Descrição Electrónicos  AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A )
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF1302PBF Folha de dados(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
S
D
G
VDSS = 20V
RDS(on) = 4.0mΩ
ID = 180A
†
06/29/04
www.irf.com
1
Benefits
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
AUTOMOTIVE MOSFET
PD - 95499
IRF1302PbF
TO-220AB
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130
†
A
IDM
Pulsed Drain Current

700
PD @TC = 25°C
Power Dissipation
230
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
350
mJ
IAR
Avalanche Current

See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
‡
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
TBD
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient (PCB mount)
ˆ
–––
62


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