TIP127 datasheet(2/2 Pages) DIOTEC

Nome de Peças	TIP127

Descrição Electrónicos	Si-Epitaxial Planar Darlington Power Transistors

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Fabricante Electrônico	DIOTEC [Diotec Semiconductor]

Página de início	http://www.diotec.com

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TIP125 ... TIP127

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)

- IC = 3 A, IB = 12 mA

- IC = 5 A, IB = 20 mA

- VCEsat

–

2 V

4 V

Base-Emitter voltage – Basis-Emitter-Spannung 2)

- IC = 3 A, - VCE = 3 V

- VBE

–

2.5 V

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 30 V, (B open)

- VCE = 40 V, (B open)

- VCE = 50 V, (B open)

TIP125

TIP126

TIP127

- ICEO

–

500 nA

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 60 V, (E open)

- VCB = 80 V, (E open)

- VCB = 100 V, (E open)

TIP125

TIP126

TIP127

- ICBO

–

200 nA

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 100 kHz

C

CB0

–

200 pF

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 63 K/W 1)

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

RthC

< 3 K/W

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

M4

9 ± 10% lb.in.

1 ± 10% Nm

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

TIP120 ... TIP122

Equivalent Circuit – Ersatzschaltbild

2

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

http://www.diotec.com/

T

1

T

2

EB

C

T2

T1

E2

C2

B1

Nº de peça semelhante - TIP127

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mospec Semiconductor	TIP127	206Kb / 4P	POWER TRANSISTORS(5.0A,60-100V,65W)
Savantic, Inc.	TIP127	134Kb / 4P	Silicon PNP Darlington Power Transistors
Shenzhen Tuofeng Semico...	TIP127	4Mb / 2P	PNP Darlington Transistors
TRANSYS Electronics Lim...	TIP127	80Kb / 3P	PLASTIC POWER TRANSISTORS
ON Semiconductor	TIP127	114Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2007 - Rev. 7

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Descrição semelhante - TIP127

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Diotec Semiconductor	TIP120	110Kb / 2P	Si-Epitaxial Planar Darlington Power Transistors
Diotec Semiconductor	BCX38B	108Kb / 2P	Si-Epitaxial Planar Darlington-Transistors
Panasonic Semiconductor	2SD946	262Kb / 6P	SI NPN EPITAXIAL PLANAR DARLINGTON
List of Unclassifed Man...	2SB750	58Kb / 1P	Si PNP Epitaxial Planar Darlington
Panasonic Semiconductor	2SC1547	235Kb / 6P	2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR
Diotec Semiconductor	PN2907	96Kb / 2P	Si-Epitaxial Planar Switching Transistors
	2N3904	96Kb / 2P	Si-Epitaxial-Planar Switching Transistors
	2N3906	103Kb / 2P	Si-Epitaxial-Planar Switching Transistors
Continental Device Indi...	MPSA13	298Kb / 3P	NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS
TRANSYS Electronics Lim...	MPSA13	86Kb / 2P	NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS

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