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TC6320 Folha de dados(PDF) 2 Page - Supertex, Inc |
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TC6320 Folha de dados(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 TC6320 N- Channel Electrical Characteristics (T J = 25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage 200 - - V V GS = 0V, ID = 2.0mA V GS(th) Gate threshold voltage 1.0 - 2.0 V V GS = VDS, ID = 1.0mA ΔV GS(th) Change in V GS(th) with temperature - - -4.5 mV/OCV GS = VDS, ID = 1.0mA R GS Gate-Source Shunt Resistor 10 - 50 KΩ I GS = 100µA ΔR GS Change in RGS with Temperature - - TBD %/OCI GS = 100µA VZ GS Gate-Source Zener Voltage 13.2 - 25 V I GS = 2.0mA ΔVZ GS Change in VZGS with Temperature - TBD mV/OCI GS = 2.0mA I DSS Zero gate voltage drain current - - 10.0 µA V DS = Max rating, VGS = 0V - - 1.0 mA V DS = 0.8 Max Rating, V GS = 0V, TA = 125 OC I D(ON) ON-state drain current 1.0 - - A V GS = 4.5V, VDS = 25V 2.0 - - V GS = 10V, VDS = 25V R DS(ON) Static drain-to-source ON-state resis- tance - - 8.0 Ω V GS = 4.5V, ID = 150mA - - 7.0 V GS = 10V, ID = 1.0A ΔR DS(ON) Change in R DS(ON) with temperature - - 1.0 %/OCV GS = 4.5V, ID =150mA G FS Forward transconductance 400 - - mmho V DS = 25V, ID = 200mA C ISS Input capacitance - - 110 pF V GS = 0V, V DS = 25V, f = 1MHz C OSS Common source output capacitance - - 60 C RSS Reverse transfer capacitance - - 23 t d(ON) Turn-ON delay time - - 10 ns V DD =25V, I D = 1.0A, R GEN = 25Ω t r Rise time - - 15 t d(OFF) Turn-OFF delay time - - 20 t f Fall time - - 15 V SD Diode forward voltage drop - - 1.8 V V GS = 0V, ISD = 0.5A t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = 0.5A Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. N- Channel Switching Waveforms and Test Circuit Pulse Generator VDD RL D.U.T OUTPUT 10V 0V 0V V DD t d(OFF) Input Output t r t f t d(ON) t (ON) t (OFF) 10% 90% 90% 10% 90% 10% RGEN Input |
Nº de peça semelhante - TC6320_07 |
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Descrição semelhante - TC6320_07 |
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