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IRF7402PBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF7402PBF
Descrição Electrónicos  HEXFET짰 Power MOSFET
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7402PBF Folha de dados(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
9/30/04
IRF7402PbF
Description
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
Thermal Resistance
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
VDSS = 20V
RDS(on) = 0.035Ω
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
www.irf.com
1
SO-8
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
6.8
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
5.4
A
IDM
Pulsed Drain Current
54
PD @TA = 25°C
Power Dissipation
2.5
W
PD @TA = 70°C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
PD - 95202


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