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BC856B Folha de dados(PDF) 2 Page - Pan Jit International Inc. |
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BC856B Folha de dados(HTML) 2 Page - Pan Jit International Inc. |
2 / 4 page THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT Thermal Resistance , Junction to Ambient RΘJA 556 OC/W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout. EL ECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector - Emitter Breakdown Voltage BC856A,B (IC=-10mA, IB=0) BC857A,B,C BC858A,B,C, BC859B,C V(BR)CE0 -65 -45 -30 - - - - - - V Collector - Base Breakdown Voltage BC856A,B (IC=-10 µA, IE=0) BC857A,B,C BC858A,B,C, BC859B,C V(BR)CB0 -80 -50 -30 - - - - - - V Emitter - Base Breakdown Voltage (IE=-1 µA, IC=0) V(BR)EB0 -5.0 - - V Emitter-Base Cutoff Current (VEB=-5V) IEBO - - -100 nA Collector-Base Cutoff Current (VCB=-30V, IE=0) T J=150 OC ICBO - - - - -15 -4.0 nA uA DC Current Gain BC856A, BC857A, BC858A (IC=-10 µA, VCE=-5V) BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C (IC=-2.0mA, VCE=-5V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C hFE - - - 110 200 420 90 150 270 180 290 520 - - - 220 450 800 - Collector – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA) (IC=-100mA, IB=-5.0mA) VCE(SAT) - - - - -0.3 -0.65 V Base – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA) (IC=-100mA, IB=-5.0mA) VBE(SAT) - - -0.7 -0.9 - - V Base – Emitter On Voltage (IC=-2.0mA, VCE=-5.0V) (IC=-10mA, VCE=-5.0V) VBE(ON) -0.60 - - - -0.75 -0.82 V Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz) CCB - - 4.5 pF Current-Gain - Bandwidth Product (IC=-10mA, VCE=-5.0V, f=100MHz) FT - 200 - MHz PAGE . 2 BC856 SERIES STAD-JUL.11.2005 |
Nº de peça semelhante - BC856B |
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Descrição semelhante - BC856B |
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