SILICON ZENER DIODES

1N746 to 1N759

DO-35

400mW

Hermetically Sealed Glass Package Zener Diodes

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Zener Voltage

ZV

3.3 to 12

V

D C Power Dissipation

PD

400

mW

Derating Above 50 deg C

3.2

mW/deg C

Operating & Storage Junction

Tj,Tstg

-65 to +175

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified , VF <1.5V @ 200mA

Device

Nominal*

Zener

Maximum

Maximum

@

VR

Maximum

Typ

Type#

Zener

Test

Zener

Reverse Current

Zener

Temp

(1)

Voltage

Current

Impedance

@25 deg C

@ +150 deg C

Current

Coeff of Zener

VZ @ IZT

IZT

Zzt @ IZT

max

max

IZM

Voltage *vz

(V)

(mA)

(Ohms)

(uA)

(uA)

(V)

(mA)

(% deg C)

1N746

3.3

20

28

10

30

1.0

110

-0.066

1N747

3.6

20

24

10

30

1.0

100

-0.058

1N748

3.9

20

23

10

30

1.0

95

-0.046

1N749

4.3

20

22

2.0

30

1.0

85

-0.033

1N750

4.7

20

19

2.0

30

1.0

75

-0.015

1N751

5.1

20

17

1.0

20

1.0

70

+-0.010

1N752

5.6

20

11

1.0

20

1.0

65

+0.030

1N753

6.2

20

7

0.1

20

1.0

60

+0.049

1N754

6.8

20

5

0.1

20

1.0

55

+0.053

1N755

7.5

20

6

0.1

20

1.0

50

+0.057

1N756

8.2

20

8

0.1

20

1.0

45

+0.060

1N757

9.1

20

10

0.1

20

1.0

40

+0.061

1N758

10

20

17

0.1

20

1.0

35

+0.062

1N759

12

20

30

0.1

20

1.0

30

+0.062

Note(1) :- No Suffix +-10%

Suffix A +- 5%

* Pulse Condition : 20ms <tp 50ms, Duty Cycle<2%

Transys

Electronics

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