2N4403 datasheet(1/1 Pages) TEL

Nome de Peças	2N4403

Descrição Electrónicos	Plastic-Encapsulated Transistors

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Fabricante Electrônico	TEL [TRANSYS Electronics Limited]

Página de início	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulated Transistors

2N4403

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM :

0.625 W (Tamb=25

℃)

Collector current

ICM :

-0.6

A

Collector-base voltage

V(BR)CBO : -40

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100

µA , I

E=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA , IB=0

-40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35 V, IE=0

-0.1

µA

Collector cut-off current

ICEO

VCE=-35 V, IB=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

µA

DC current gain

hFE(1)

VCE=-2 V, IC=- 150mA

100

300

Collector-emitter saturation voltage

VCE(sat)

IC=-150 mA, IB=-15mA

-0.4

V

Base-emitter

saturation

voltage

VBE(sat)

IC= -150 mA, IB=-15mA

-0.95

V

Transition

frequency

f T

VCE= -10V, IC= -20mA

f = 100MHz

200

MHz

1 2 3

TO—92

1.EMILTTER

2.BASE

3. COLLECTOR

Transys

Electronics

LI M ITE D

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