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IRFB9N30APBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRFB9N30APBF Folha de dados(HTML) 2 Page - International Rectifier |
2 / 8 page IRFB9N30APbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.38 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.45 Ω VGS = 10V, ID = 5.5A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.6 ––– ––– S VDS = 50V, ID = 5.6A ––– ––– 25 µA VDS = 300V, VGS = 0V ––– ––– 250 VDS = 240V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Qg Total Gate Charge ––– ––– 33 ID = 9.3A Qgs Gate-to-Source Charge ––– ––– 6.9 nC VDS = 240V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 12 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 10 ––– VDD = 150V tr Rise Time ––– 25 ––– ID = 9.3A td(off) Turn-Off Delay Time ––– 35 ––– RG = 12Ω tf Fall Time ––– 29 ––– RD = 16 Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 920 ––– VGS = 0V Coss Output Capacitance ––– 160 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 8.7 ––– ƒ = 1.0MHz, See Fig. 5 Coss Input Capacitance ––– 1200 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz Coss Input Capacitance ––– 52 ––– VGS = 0V, VDS = 240V, ƒ = 1.0 MHz Coss eff. Input Capacitance ––– 102 ––– VGS = 0V, VDS = 0V to 240 V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns IDSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS =9.3A, VGS = 0V trr Reverse Recovery Time ––– 280 420 ns TJ = 25°C, IF = 9.3A Qrr Reverse RecoveryCharge ––– 1.5 2.3 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 9.3 37 S D G 4.5 7.5 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 9.3A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 3.7mH RG = 25Ω, IAS = 9.3A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS |
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