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IRFB9N30APBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRFB9N30APBF
Descrição Electrónicos  HEXFET짰 Power MOSFET
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFB9N30APBF Folha de dados(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
300
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.38
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.45
VGS = 10V, ID = 5.5A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.6
–––
–––
S
VDS = 50V, ID = 5.6A
–––
–––
25
µA
VDS = 300V, VGS = 0V
–––
–––
250
VDS = 240V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Qg
Total Gate Charge
–––
–––
33
ID = 9.3A
Qgs
Gate-to-Source Charge
–––
–––
6.9
nC
VDS = 240V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
12
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 150V
tr
Rise Time
–––
25
–––
ID = 9.3A
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 12Ω
tf
Fall Time
–––
29
–––
RD = 16 Ω, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
920
–––
VGS = 0V
Coss
Output Capacitance
–––
160
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
8.7
–––
ƒ = 1.0MHz, See Fig. 5
Coss
Input Capacitance
–––
1200 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz
Coss
Input Capacitance
–––
52
–––
VGS = 0V, VDS = 240V, ƒ = 1.0 MHz
Coss eff.
Input Capacitance
–––
102
–––
VGS = 0V, VDS = 0V to 240 V
…
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
IDSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS =9.3A, VGS = 0V
„
trr
Reverse Recovery Time
–––
280
420
ns
TJ = 25°C, IF = 9.3A
Qrr
Reverse RecoveryCharge
–––
1.5
2.3
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
9.3
37
S
D
G
4.5
7.5
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 9.3A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 3.7mH
RG = 25Ω, IAS = 9.3A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS


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