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FDD6N50FTM Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDD6N50FTM Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page tm June 2007 ©2007 Fairchild Semiconductor Corporation FDD6N50F / FDU6N50F Rev. A www.fairchildsemi.com 1 UniFET TM FDD6N50F / FDU6N50F N-Channel MOSFET 500V, 5.5A, 1.15 Ω Features •RDS(on) = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A • Low gate charge ( Typ. 15nC) • Low Crss ( Typ. 6.3pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G S G S D D-PAK FDD Series I-PAK FDU Series G D S MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±30 V ID DrainCurrent -Continuous (TC = 25oC) 5.5 A -Continuous (TC = 100oC) 2.4 IDM Drain Current - Pulsed (Note 1) 22 A EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 89 W - Derate above 25oC0.71 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 1.4 oC/W RθJA Thermal Resistance, Junction to Ambient 83 *When mounted on the minimum pad size recommended (PCB Mount) |
Nº de peça semelhante - FDD6N50FTM |
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Descrição semelhante - FDD6N50FTM |
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