SI4804BDY datasheet(2/5 Pages) VISHAY

Nome de Peças	SI4804BDY

Descrição Electrónicos	Dual N-Channel 30-V (D-S) MOSFET

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Si4804BDY

Vishay Siliconix

www.vishay.com

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Document Number: 72061

S-32621—Rev. D, 29-Dec-03

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.8

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 30 V VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V VGS = 0 V TJ = 85_C

15

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 85_C

15

mA

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

20

A

Drain Source On State Resistanceb

rDS( )

VGS = 10 V, ID = 7.5 A

0.017

0.022

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4.5 V, ID = 6.5 A

0.024

0.030

W

Forward Transconductanceb

gfs

VDS = 15 V, ID = 7.5 A

19

S

Diode Forward Voltageb

VSD

IS = 1 A VGS = 0 V

075

12

V

Diode Forward Voltageb

VSD

IS = 1 A, VGS = 0 V

0.75

1.2

V

Dynamica

Total Gate Charge

Qg

7

11

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 7.5 A

2.9

nC

Gate-Drain Charge

Qgd

DS

, GS

, D

2.5

Gate Resistance

Rg

0.5

1.5

2.6

W

Turn-On Delay Time

td(on)

9

15

Rise Time

tr

VDD = 15 V, RL = 15 W

10

17

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

19

30

ns

Fall Time

tf

9

15

Source Drain Reverse Recovery Time

t

IF = 1 7 A di/dt = 100 A/ms

Ch 1

35

55

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, di/dt = 100 A/ms

Ch-1

35

55

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

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