Description

Features

n PLANAR PROCESS

n 500 mW POWER DISSIPATION

Mechanical Dimensions

n INDUSTRY STANDARD DO-35

PACKAGE

n MEETS UL SPECIFICATION 94V-0

Maximum Ratings

Peak Reverse Voltage...V

RM

RMS Reverse Voltage...V

R(rms)

1N4151

Data Sheet

500 mW EPITAXIAL

PLANAR DIODES

Units

Volts

Volts

............................................. 215 ...............................................

............................................. 500 ...............................................

............................................. 500 ...............................................

......................................... -65 to 150 .........................................

............................................. 1.0 ...............................................

............................................. 50 ...............................................

............................................. 100 ...............................................

............................................. 2.0 ...............................................

............................................. 2.0 ...............................................

mAmps

mAmps

mW

°C

Volts

nAmps

MHz

pF

ns

Page 8-5

Average Forward Rectified Current...I

O

Non-Repetitive Peak Forward Surge Current...I

FSM

Power Dissipation...P

D

Operating & Storage Temperature Range...T

Maximum Forward Voltage...V

F

@ I

Maximum DC Reverse Current...I

R

@ V

Maximum Frequency...f

Maximum Diode Capacitance...C

D

Maximum Reverse Recovery Time...t

RR

IN4151

75

50

JEDEC

D0-35

P

50 Ohms

5K Ohms

R

.01 uF

I

F

Output

Trr

I

R

0.1 I

R

Device Under T

Device Under T

Device Under T

Device Under T

Device Under Test

est

est

est

est

Electrical Characteristics

.120

.200

1.00 Min.

.018

.022

.060

.090