2SD2088 datasheet(1/5 Pages) TOSHIBA

Nome de Peças	2SD2088

Descrição Electrónicos	Silicon NPN Epitaxial Type (Darlington power transistor)

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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2SD2088

2003-02-04

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

2SD2088

Micro Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

· Zener diode included between collector and base.

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

60 ± 10

V

Collector-emitter voltage

VCEO

60 ± 10

V

Emitter-base voltage

VEBO

8

V

Collector current

IC

2

A

Base current

IB

0.5

A

Collector power dissipation

PC

0.9

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Equivalent Circuit

Unit: mm

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

BASE

EMITTER

≈ 4 kΩ

≈ 800 Ω

COLLECTOR

Nº de peça semelhante - 2SD2088

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	2SD2088	179Kb / 4P	NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)
	2SD2088	151Kb / 5P	Micro Motor Drive, Hammer Drive Applications
	2SD2088	151Kb / 5P	Micro Motor Drive, Hammer Drive Applications

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Descrição semelhante - 2SD2088

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