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BF909 Folha de dados(PDF) 8 Page - NXP Semiconductors |
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BF909 Folha de dados(HTML) 8 Page - NXP Semiconductors |
8 / 12 page NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R Fig.16 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. 10 3 MLB948 102 10 1 10 2 10 1 10 10 2 y fs (mS) y fs f (MHz) fs fs (deg) ϕ ϕ Fig.17 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage 10 3 MLB949 102 10 10 1 10 1 10 2 yos (mS) f (MHz) bos gos Fig.18 Cross-modulation test set-up. DUT VAGC C1 4.7 nF R1 10 k Ω C5 MLD151 C4 4.7 nF VDS L1 350 nH C3 12 pF 2.2 pF R L 50 Ω 50 Ω 50 Ω R3 10 Ω ≈ VGG RGEN V I R2 4.7 nF C2 R G1 Rev. 02 - 19 November 2007 8 of 12 |
Nº de peça semelhante - BF909 |
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Descrição semelhante - BF909 |
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