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BF1100R Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças BF1100R
Descrição Electrónicos  Dual-gate MOS-FETs
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Fabricante Electrônico  NXP [NXP Semiconductors]
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BF1100R Folha de dados(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
14
V
ID
drain current
−
30
mA
IG1
gate 1 current
−±10
mA
IG2
gate 2 current
−±10
mA
Ptot
total power dissipation
see Fig.3
BF1100
up to Tamb =50 °C; note 1 −
200
mW
BF1100R
up to Tamb =40 °C; note 1 −
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
+150
°C
Fig.3 Power derating curves.
handbook, halfpage
0
50
100
200
250
0
200
MLD155
150
150
100
50
Ptot
(mW)
T
( C)
amb
o
BF1100R
BF1100
Fig.4
Forward transfer admittance as a function
of junction temperature; typical values.
50
0
50
150
40
0
MLD156
100
30
20
10
Yfs
(mS)
T ( C)
j
o
Rev. 02 - 13 November 2007
3 of 15


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