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74AUP1T97GF Folha de dados(PDF) 9 Page - NXP Semiconductors

Nome de Peças 74AUP1T97GF
Descrição Electrónicos  Low-power configurable gate with voltage-level translator
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
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74AUP1T97GF Folha de dados(HTML) 9 Page - NXP Semiconductors

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74AUP1T97_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2007
9 of 17
NXP Semiconductors
74AUP1T97
Low-power configurable gate with voltage-level translator
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
VCC = 3.0 V to 3.6 V; VI = 2.3 V to 2.7 V
tpd
propagation delay
A, B, C to Y; see Figure 12
[2]
CL = 5 pF
1.7
2.8
4.2
0.5
5.3
5.9
ns
CL = 10 pF
2.1
3.4
5.0
1.0
6.1
6.8
ns
CL = 15 pF
2.4
3.8
5.6
1.0
6.8
7.5
ns
CL = 30 pF
3.2
5.0
7.1
1.5
8.5
9.4
ns
VCC = 3.0 V to 3.6 V; VI = 3.0 V to 3.6 V
tpd
propagation delay
A, B, C to Y; see Figure 12
[2]
CL = 5 pF
1.4
2.7
4.2
0.5
4.7
5.2
ns
CL = 10 pF
1.8
3.3
5.0
1.0
5.7
6.3
ns
CL = 15 pF
2.1
3.8
5.6
1.0
6.2
6.9
ns
CL = 30 pF
2.9
4.9
7.1
1.5
7.8
8.6
ns
Tamb = 25 °C
CPD
power dissipation
capacitance
fi = 1 MHz; VI = GND to VCC [3]
VCC = 2.3 V to 2.7 V
-
3.6
-
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
4.3
-
-
-
-
pF
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13.
Symbol Parameter
Conditions
25
°C
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85
°C)
Max
(125
°C)


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