www.irf.com

1

07/23/07

IRF7452QPbF

SMPS MOSFET

100V

0.060

Ω

4.5A

Typical SMPS Topologies

with Passive Reset Forward Converter Primary

Parameter

Max.

Units

4.5

3.6

A

Pulsed Drain Current



36

Power Dissipation

2.5

W

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

ƒ

3.5

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Notes

 through † are on page 8

SO-8

Top View

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

N Channel MOSFET

l

Surface Mount

l

Available in Tape & Reel

l

150°C Operating Temperature

l

Automotive [Q101] Qualified

l

Lead-Free

Description

Specifically designed for Automotive applications, these

lastest processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a

150°C junction operating temperature, fast switching speed

and improved repetitive avalanche rating. These benefits

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide

variety of other applications.

The efficient SO-8 package provides enhanced thermal

characteristics making it ideal in a variety of power applications.

This surface mount SO-8 can dramatically reduce board

space and is also available

in Tape & Reel.

PD - 96113