TPCP8301 datasheet(3/7 Pages) TOSHIBA

Nome de Peças	TPCP8301

Descrição Electrónicos	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCP8301

2006-11-17

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±10

μA

Drain cutoff current

IDSS

VDS = −20 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = -12 V

−8

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 μA

−0.5

⎯

−1.2

V

RDS (ON)

VGS = −2.0 V, ID = −1.3 A

⎯

55

130

RDS (ON)

VGS = −2.5 V, ID = −2.5A

⎯

38

60

Drain-source ON-resistance

RDS (ON)

VGS = −4.5 V, ID = −2.5A

⎯

25

31

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = 2.5A

7

14

⎯

S

Input capacitance

Ciss

⎯

1500

⎯

Reverse transfer capacitance

Crss

⎯

240

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

220

⎯

pF

Rise time

tr

⎯

10

⎯

Turn-on time

ton

⎯

20

⎯

Fall time

tf

⎯

50

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

170

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

20

⎯

Gate-source charge1

Qgs1

⎯

3.6

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ∼− −16 V, VGS = −5 V,

ID = −5 A

⎯

5.5

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

−20

A

Forward voltage (diode)

VDSF

IDR = −5 A, VGS = 0 V

⎯

1.2

V

VDD ∼− -10 V

-5V

VGS

0V

ID = -2.5A

OUT

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