TPCP8401_07 datasheet(6/10 Pages) TOSHIBA

Nome de Peças	TPCP8401

Descrição Electrónicos	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS ??/ ?-MOS ??

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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6 / 10 page

TPCP8401

2006-11-13

6

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Total gate charge Qg (nC)

Dynamic input/output characteristics

10

100

1000

10000

−0.1

−1

−10

−100

Crss

Coss

Ciss

Common source

Ta

= 25°C

f

= 1 MHz

VGS = 0 V

−0.3

−3

−30

30

300

3000

0

−0.5

−1.5

−2.0

−80

−40

0

40

80

160

Common source

VDS = −10 V

ID = −200 μA

Pulse test

120

−1.0

−1

−10

0

0.4

0.8

1.2

1.6

2.0

−100

Common source

Ta

= 25°C

Pulse test

−2.0

−1

VGS = 0 V

−4.5

−3

−30

−1.8

0

0.5

1

1.5

2

2.5

40

80

120

160

(1) Device mounted on a

glass-epoxy board(a)

(Note 2a)

(2) Device mounted on a

glass-epoxy board(b)

(Note 2b)

(1) t

= 5 s

(2) t

= 5 s

(1) DC

(2) DC

−80

−40

0

40

80

160

120

VGS = −1.8 V

ID = −1.4A

−2.8 A

ID = −1.4A

−5.5 A

−2.8 A

ID = −1.4 A, −2.8 A, −5.5 A

−2.5 V

−4.5 V

160

0

40

80

120

−80

−40

0

40

80

160

120

Common source

Pulse test

0

08

16

−4

−12

−20

0

−2

−6

−10

−8

24

32

40

−8

−16

−4

−5 V

VDD = −10 V

VGS

VDD = −10 V

−5

−2.5 V

Common source

ID = −5.5 A

Ta

= 25°C

Pulse test

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TPCP8401 Folha de dados(PDF) 6 Page - Toshiba Semiconductor

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