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TPCS8009-H Folha de dados(PDF) 5 Page - Toshiba Semiconductor |
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TPCS8009-H Folha de dados(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCS8009-H 2006-11-20 5 160 200 Ambient temperature Ta (°C) Dynamic input/output characteristics Total gate charge Qg (nC) Ambient temperature Ta (°C) RDS (ON) − Ta Drain-source voltage VDS (V) IDR − VDS Vth − Ta 0.1 10 1 −0.2 0 −1.0 −0.6 −0.4 −0.8 10 3 1 VGS = 0 V Common source Ta = 25°C Pulse test 0 0.8 0.2 0.4 0.6 −40 −80 160 0 40 80 Common source VGS = 10 V Pulse test ID = 2.1 A 0.5 1.0 200 150 100 0 0 16 12 8 0 VDS = 120 V 60 VGS VDS Common source ID = 2.1 A Ta = 25°C Pulse test 5 10 15 30 4 1 2 3 0 −80 0 40 80 120 160 −40 Common source VDS = 10 V ID = 1mA Pulse test 120 5 Ambient temperature Ta (°C) PD – Ta 0 0 40 80 120 0.4 0.8 1.2 1.6 2.0 (2) (1) 1 0.1 10 100 1000 1 10 100 Ciss Coss Crss Drain-source voltage VDS (V) Capacitance – VDS Common source VGS = 0 V f = 1 MHz Ta = 25°C 50 4 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t= 10s |
Nº de peça semelhante - TPCS8009-H |
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Descrição semelhante - TPCS8009-H |
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