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TPCS8213 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças TPCS8213
Descrição Electrónicos  Lithium Ion Battery Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8213 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

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TPCS8213
2007-01-16
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
114
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
167
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
208
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
357
°C/W
Marking (Note 6)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
(a)
(b)
Note 3:
a)
The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is applied to one device only.)
b)
The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is applied to both devices evenly.)
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6 A
Note 5: Repetitive rating: pulse width limited by max channel temperature
Note 6: The circle “○” on lower right of the marking indicates Pin 1.
Type
S8213
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
FR-4
25.4
× 25.4 × 0.8
(unit: mm)
Lot No.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)


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