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TPCS8302 Folha de dados(PDF) 3 Page - Toshiba Semiconductor

Nome de Peças TPCS8302
Descrição Electrónicos  Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Download  7 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8302 Folha de dados(HTML) 3 Page - Toshiba Semiconductor

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TPCS8302
2006-11-16
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
±10
μA
Drain cut-OFF current
IDSS
VDS = −20 V, VGS = 0 V
−10
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−20
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 12 V
−8
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −200 μA
−0.5
−1.2
V
VGS = −2.0 V, ID = −2.5 A
42
95
VGS = −2.5 V, ID = −2.5 A
32
60
Drain-source ON resistance
RDS (ON)
VGS = −4.5 V, ID = −2.5 A
22
35
m
Ω
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
5.5
12
S
Input capacitance
Ciss
1590
Reverse transfer capacitance
Crss
380
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
430
pF
Rise time
tr
9
Turn-ON time
ton
16
Fall time
tf
45
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 μs
113
ns
Total gate charge
(gate-source plus gate-drain)
Qg
28.5
Gate-source charge 1
Qgs
19
Gate-drain (“miller”) charge
Qgd
VDD ∼− 16 V, VGS = −5 V, ID = −5 A
9.4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
1.2
V
VDD ∼− 10 V
−5 V
VGS
0 V
ID = −2.5 A
VOUT


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