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2SC5439 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SC5439 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SC5439 2006-11-10 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 1000 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 1000 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 450 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 10 ― ― DC current gain hFE (2) VCE = 5 V, IC = 1 A 14 ― 34 Collector-emitter saturation voltage VCE (sat) IC = 3.2 A, IB = 0.64 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 3.2 A, IB = 0.64 A ― ― 1.5 V Turn-on time ton ― 0.2 ― Storage time tstg ― 2.0 3.5 Switching time Fall time tf IB1 = 0.64 A, IB2 = −1.28 A, duty cycle ≤ 1% ― 0.15 ― μs Marking IB2 IB1 VCC ≈ 200 V Output Input 20 μs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. C5439 Part No. (or abbreviation code) |
Nº de peça semelhante - 2SC5439_06 |
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Descrição semelhante - 2SC5439_06 |
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