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2SC5439 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças 2SC5439
Descrição Electrónicos  Silicon NPN Triple Diffused Type Switching Regulator Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5439 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

  2SC5439_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC5439_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC5439_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC5439_06 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC5439
2006-11-10
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 1000 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
10
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
1000
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
450
V
hFE (1)
VCE = 5 V, IC = 1 mA
10
DC current gain
hFE (2)
VCE = 5 V, IC = 1 A
14
34
Collector-emitter saturation voltage
VCE (sat)
IC = 3.2 A, IB = 0.64 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 3.2 A, IB = 0.64 A
1.5
V
Turn-on time
ton
0.2
Storage time
tstg
2.0
3.5
Switching time
Fall time
tf
IB1 = 0.64 A, IB2 = −1.28 A,
duty cycle ≤ 1%
0.15
μs
Marking
IB2
IB1
VCC ≈ 200 V
Output
Input
20 μs
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C5439
Part No. (or abbreviation code)


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