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2SC2229 Folha de dados(PDF) 1 Page - Toshiba Semiconductor |
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2SC2229 Folha de dados(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC2229 2006-11-09 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO = 150 V (min) • Low output capacitance: Cob = 5.0 pF (max) • High transition frequency: fT = 120 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 800 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) |
Nº de peça semelhante - 2SC2229 |
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Descrição semelhante - 2SC2229 |
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