2SJ440

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ440

Audio Frequency Power Amplifier Application

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−180

V

Gate-source voltage

±20

V

Drain current

(Note 1)

−9

A

Power dissipation (Tc = 25°C)

80

W

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C.

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16F1B

Weight: 5.8 g (typ.)