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SI3460-EVB Folha de dados(PDF) 8 Page - Silicon Laboratories |
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SI3460-EVB Folha de dados(HTML) 8 Page - Silicon Laboratories |
8 / 22 page Si3460 8 Preliminary Rev. 0.4 4. Si3460-EVB Performance Characteristics When implemented in accordance with the recommended external components and layout guidelines, the Si3460 controller enables the following typical performance characteristics in single-port PSE applications. Refer to the Si3460-EVB applications note, schematics, and user's guide for more details. Table 5. PSE Performance Characteristics1 Parameter Symbol Conditions Min Typ Max Unit Protection and Current Control Overload current threshold ICUT All class levels 15,400/ VOUT 340 400 mA Overload current limit ILIM Output = 100 Ω across VOUT 400 425 450 mA Overload time TLIM Output = 100 Ω across VOUT 50 60 75 ms Output power at overload PLIM 15.4 17 — W Disconnect current IMIN Disconnect current 5 7.5 10 mA Detection Specifications2 Detection voltage VDET Detection point 1 (w/ 10 k Ω source) Detection point 2 (w/ 10 k Ω source) Detection point 3 (w/ 10 k Ω source) 4.5 7.5 4.5 V Minimum signature resistance RDETmin 15 17 19 k Ω Maximum signature resistance RDETmax 26.5 29 33 k Ω Classification Specifications2 Classification voltage VCLASS 0 mA < ICLASS < 45 mA –20.5 –15.5 V Classification current limit ICLASS Measured with 200 Ω across VOUT 55 95 mA Classification current region3 ICLASS_REGION Class 0 Class 1 Class 2 Class 3 Class 4 0 8 16 25 35 5 13 21 31 45 mA mA mA mA mA Notes: 1. Typical specifications are based on an ambient operating temperature of 25 ºC and VIN = +12 V unless otherwise specified. 2. See “4. Si3460-EVB Performance Characteristics” for more details. 3. Absolute classification current limits are programmable. |
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