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2SK2312 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças 2SK2312
Descrição Electrónicos  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2312 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

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2SK2312
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 25 A
19
25
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
13
17
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
28
40
S
Input capacitance
Ciss
3350
Reverse transfer capacitance
Crss
550
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1600
pF
Rise time
tr
25
Turn−on time
ton
55
Fall time
tf
60
Switching time
Turn−off time
toff
180
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
110
Gate−source charge
Qgs
70
Gate−drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 45 A
40
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
45
A
Pulse drain reverse current
(Note 1)
IDRP
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
120
ns
Reverse recovered charge
Qrr
IDR = 45 A, VGS = 0 V
dIDR / dt = 50 A / μs
0.2
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2312
Part No. (or abbreviation code)


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