2SK2382

2006-11-21

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2382

Switching Regulator, DC−DC Converter and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

200

V

200

V

Gate−source voltage

±20

V

DC

(Note 1)

15

A

Drain current

Pulse (Note 1)

45

A

Drain power dissipation (Tc = 25°C)

45

W

Single pulse avalanche energy

(Note 2)

166

mJ

Avalanche current

15

A

Repetitive avalanche energy (Note 3)

4.5

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

2.78

°C / W

Thermal resistance, channel to

ambient

62.5

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)