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2SK2613 Folha de dados(PDF) 5 Page - Toshiba Semiconductor |
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2SK2613 Folha de dados(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK2613 2006-11-09 5 10 μ 100 μ 1 m 10 m 100 m 1 10 0.001 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-c) = 0.833°C/W Single pulse Duty = 0.5 0.2 0.1 0.05 0.02 0.01 rth − tw Safe operating area EAS – Tch Drain-source voltage VDS (V) Pulse width tw (S) Channel temperature (initial) Tch (°C) −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 26.3 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 0.01 1 0.1 0.03 0.05 1 0.3 0.5 10 3 5 10 3 100 30 10000 300 DC Operation Tc = 25°C 100 μs * 1 ms * * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (pulsed) * ID max (continuous) VDSS max 1000 3000 100 30 50 0 25 200 400 600 1000 800 50 75 100 125 150 |
Nº de peça semelhante - 2SK2613_06 |
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Descrição semelhante - 2SK2613_06 |
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