2SJ620_06 datasheet(4/6 Pages) TOSHIBA

Nome de Peças	2SJ620

Descrição Electrónicos	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

2SJ620

2006-11-16

4

−200

−40

−120

−80

0

−40

VDD = −80 V

VGS

VDS

−16

−4

−12

−8

0

−20

40

80

120

160

200

Common source

ID = −18 A

Tc

= 25°C

pulse test

Case temperature

Tc (°C)

RDS (ON) − Tc

Drain-source voltage VDS (V)

IDR − VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Case temperature Tc (°C)

Vth − Tc

Case temperature

Tc (°C)

PD − Tc

Total gate charge Qg (nC)

Dynamic input/output characteristics

0

0.20

0.10

0.05

0.15

−80

−40

0

40

80

160

120

Common source

pulse test

ID = −18 A

−9

−4.5

VGS = −4 V

VGS = −10 V

−0.3

−100

−0.5

−3

−10

−5

−1.0

0

0.4

1.2

1.6

2.0

2.4

0.8

−30

−50

Common source

Tc

= 25°C

pulse test

−1

VGS = 0, 1 V

−5

−10

1000

3000

−1

−0.1

−100

−10

Ciss

Coss

Crss

Common source

VGS = 0 V

f

= 1 MHz

Tc

= 25°C

100

300

5000

30000

−0.3

−3

−30

50000

500

10000

0

40

80

120

160

−1

−3

−2

−4

0

−80

−40

Common source

VDS = −10 V

ID = −1 mA

pulse test

200

50

100

0

150

40

80

120

160

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