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2SK2789 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças 2SK2789
Descrição Electrónicos  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2789 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

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2SK2789
2006-11-20
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VDS = 4 V, ID = 15 A
0.09
0.13
Drain−source ON resistance
RDS (ON)
VDS = 10 V, ID = 15 A
0.066
0.085
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
8
16
S
Input capacitance
Ciss
1100
Reverse transfer capacitance
Crss
180
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
400
pF
Rise time
tr
20
Turn−on time
ton
30
Fall time
tf
50
Switching time
Turn−off time
toff
140
ns
Total gate charge (gate−source
plus gate−drain)
Qg
50
Gate−source charge
Qgs
34
Gate−drain (“miller”) Charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 27 V
16
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
27
A
Pulse drain reverse current
(Note 1)
IDRP
108
A
Forward voltage (diode)
VDSF
IDR = 27 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
155
ns
Reverse recovery charge
Qrr
IDR = 27 A, VGS = 0 V, dIDR / dt = 50 A / μs
0.31
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2789
Part No. (or abbreviation code)


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