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2SK2789 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SK2789 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2789 2006-11-20 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 100 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VDS = 4 V, ID = 15 A — 0.09 0.13 Drain−source ON resistance RDS (ON) VDS = 10 V, ID = 15 A — 0.066 0.085 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 15 A 8 16 — S Input capacitance Ciss — 1100 — Reverse transfer capacitance Crss — 180 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 400 — pF Rise time tr — 20 — Turn−on time ton — 30 — Fall time tf — 50 — Switching time Turn−off time toff — 140 — ns Total gate charge (gate−source plus gate−drain) Qg — 50 — Gate−source charge Qgs — 34 — Gate−drain (“miller”) Charge Qgd VDD ≈ 80 V, VGS = 10 V, ID = 27 V — 16 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 27 A Pulse drain reverse current (Note 1) IDRP — — — 108 A Forward voltage (diode) VDSF IDR = 27 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 155 — ns Reverse recovery charge Qrr IDR = 27 A, VGS = 0 V, dIDR / dt = 50 A / μs — 0.31 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2789 Part No. (or abbreviation code) |
Nº de peça semelhante - 2SK2789_06 |
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Descrição semelhante - 2SK2789_06 |
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