2SK3077_07 datasheet(2/4 Pages) TOSHIBA

Nome de Peças	2SK3077

Descrição Electrónicos	SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SK3077

2007-2-19

2

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Output Power

PO

15.0

—

dBmW

Drain Efficiency

ηD

—

20.0

—

%

Power Gain

GP

VDS = 4.8V

Iidle = 43 mA (VGS = adjust)

f = 915 MHz, Pi = 0 dBmW

15.0

—

dB

Threshold Voltage

Vth

VDS = 4.8 V, ID = 0.5 mA

0.25

—

1.25

V

Drain Cut-off Current

IDSS

VDS = 10 V, VGS = 0 V

—

10

µA

Gate-Source Leakage Current

IGSS

VGS = 5 V, VDS = 0 V

—

5

µA

Note 1: These characteristic values are measured using measurement tools specified by Toshiba.

CAUTION

This transistor is the electrostatic sensitive device.

Please handle with caution.

RF OUTPUT POWER TEST FIXTURE

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