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2SK3078A Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SK3078A Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SK3078A 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output power PO 28.0 ⎯ ⎯ dBmW Drain efficiency ηD 50 ⎯ ⎯ % Power gain Gp VDS = 4.5 V, Iidle = 50 mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL == 50 Ω 8.0 ⎯ ⎯ dB Threshold voltage Vth VDS = 4.8 V, ID = 0.5 mA 0.20 ⎯ 1.20 V Drain cut-off current IDSS VDS = 10 V, VGS = 0 V ⎯ ⎯ 10 μA Gate-source leakage current IGSS VGS = 5 V, VDS = 0 V ⎯ ⎯ 5 μA Load mismatch (Note 2) ⎯ VDS = 6.5 V, f = 470 MHz, Pi = 20dBmW, Po = 28.0dBmW (VGS = adjust) VSWR LOAD 10:1 all phase No degradation ⎯ Note 2: These characteristic values are measured using measurement tools specified by Toshiba. PF Output Power Test Fixture 56 Ω 7 pF 2200 pF 5 20 1 10 pF 33 7 5 pF 7 2 2200 pF 9 29 5 pF 5 pF 3 29 2200 pF 5 10000 pF 6.8 k Ω VGS L1 VDS L2 10000 pF L1: φ0.6, 5.5ID, 5T L2: φ0.6, 5.5ID, 7T Line: 2 mm |
Nº de peça semelhante - 2SK3078A_07 |
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Descrição semelhante - 2SK3078A_07 |
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