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2SK3078A Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças 2SK3078A
Descrição Electrónicos  Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3078A Folha de dados(HTML) 2 Page - Toshiba Semiconductor

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2SK3078A
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
PO
28.0
dBmW
Drain efficiency
ηD
50
%
Power gain
Gp
VDS = 4.5 V, Iidle = 50 mA
(VGS = adjust)
f = 470 MHz, Pi = 20dBmW
ZG = ZL == 50 Ω
8.0
dB
Threshold voltage
Vth
VDS = 4.8 V, ID = 0.5 mA
0.20
1.20
V
Drain cut-off current
IDSS
VDS = 10 V, VGS = 0 V
10
μA
Gate-source leakage current
IGSS
VGS = 5 V, VDS = 0 V
5
μA
Load mismatch
(Note 2)
VDS = 6.5 V, f = 470 MHz,
Pi = 20dBmW,
Po = 28.0dBmW (VGS = adjust)
VSWR LOAD 10:1 all phase
No degradation
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
PF Output Power Test Fixture
56
Ω
7 pF
2200 pF
5
20
1
10 pF
33
7
5 pF
7
2
2200 pF
9
29
5 pF
5 pF
3
29
2200 pF
5
10000 pF
6.8 k
Ω
VGS
L1
VDS
L2
10000 pF
L1:
φ0.6, 5.5ID, 5T
L2:
φ0.6, 5.5ID, 7T
Line: 2 mm


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