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2SK3342 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças 2SK3342
Descrição Electrónicos  Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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2SK3342
2007-01-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 250 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
250
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.8
1.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
S
Input capacitance
Ciss
440
Reverse transfer capacitance
Crss
35
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
Rise time
tr
15
Turn−on time
ton
20
Fall time
tf
15
Switching time
Turn−off time
toff
60
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
10
Gate−source charge
Qgs
6
Gate−drain (“miller”) charge
Qgd
VDD ≈ 100 V, VGS = 10 V, ID = 4.5 A
4
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
4.5
A
Pulse drain reverse current
(Note 1)
IDRP
18
A
Forward voltage (diode)
VDSF
IDR = 4.5 A, VGS = 0 V
−2.0
V
Reverse recovery time
trr
110
ns
Reverse recovery charge
Qrr
IDR = 4.5 A, VGS = 0 V
dIDR / dt = 100 A / μs
0.47
μC
Marking
K3342
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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