2SK3387

2006-11-20

1

π-MOSV)

2SK3387

Switching Regulator, DC-DC Converter and Motor Drive

Applications

• 4-V gate drive

Characteristics

Symbol

Rating

Unit

Drain-source voltage

150

V

150

V

Gate-source voltage

±20

V

DC

(Note 1)

18

Drain current

Pulse (Note 1)

54

A

Drain power dissipation (Tc

= 25°C)

100

W

Single pulse avalanche energy

(Note 2)

176

mJ

Avalanche current

18

A

Repetitive avalanche energy (Note 3)

10

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.25

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by max junction temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-97

TOSHIBA

2-9F1B

Weight: 0.74 g (typ.)

1

2

3

4

Notice:

Please use the S1 pin for gate input

signal return. Make sure that the

main current flows into S2 pin.