STP8NM50_06 datasheet(4/14 Pages) STMICROELECTRONICS

Nome de Peças	STP8NM50

Descrição Electrónicos	N-channel 550V @ Tjmax - 0.7廓 - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STP8NM50 - STP8NM50FP

4/14

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

500

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 2.5A

0.7

0.8

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 2.5A

2.4

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

415

88

12

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent ouput

capacitance

VGS=0, VDS =0V to 400V

50

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400V, ID = 5A

VGS =10V

(see Figure 16)

13

4

6

nC

RG

Gate input resistance

f=1MHz Gate DC Bias = 0

Test signal level = 20mV

Open drain

3

Ω

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