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TC7WG32FU Folha de dados(PDF) 4 Page - Toshiba Semiconductor |
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TC7WG32FU Folha de dados(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TC7WG32FU/FK 2007-11-01 4 AC Characteristics (Input: tr = tf = 3 ns) Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 0.9 ⎯ 19.8 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 10.1 18.7 1.0 34.5 1.4~1.6 ⎯ 5.9 8.9 1.0 10.8 1.65~ 1.95 ⎯ 4.5 6.4 1.0 6.9 2.3~2.7 ⎯ 3.1 4.2 1.0 4.7 CL = 10 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.3 3.4 1.0 4.0 0.9 ⎯ 22.5 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 11.6 21.5 1.0 37.2 1.4~1.6 ⎯ 6.6 9.8 1.0 12.0 1.65~ 1.95 ⎯ 5.0 7.1 1.0 7.3 2.3~2.7 ⎯ 3.5 4.5 1.0 5.1 CL = 15 pF, RL = 1 MΩ 3.0~3.6 ⎯ 2.8 3.8 1.0 4.4 0.9 ⎯ 30.0 ⎯ ⎯ ⎯ 1.1~1.3 ⎯ 15.0 29.6 1.0 56.0 1.4~1.6 ⎯ 8.5 13.1 1.0 15.9 1.65~ 1.95 ⎯ 6.3 9.2 1.0 9.6 2.3~2.7 ⎯ 4.3 5.7 1.0 6.1 Propagation delay time tpLH tpHL CL = 30 pF, RL = 1 MΩ 3.0~3.6 ⎯ 3.5 4.4 1.0 4.8 ns Input capacitance CIN ⎯ 3.6 ⎯ 3 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note13) 0.9 ~ 3.6 ⎯ 11 ⎯ ⎯ ⎯ pF Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr.) = CPD・VCC・fIN + ICC/2 |
Nº de peça semelhante - TC7WG32FU |
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Descrição semelhante - TC7WG32FU |
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