TC7WZ38FU datasheet(4/7 Pages) TOSHIBA

Nome de Peças	TC7WZ38FU

Descrição Electrónicos	CMOS Digital Integrated Circuit Silicon Monolithic Dual 2 Input NAND Gate (Open Drain)

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Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

TC7WZ38FU/FK

2007-11-01

4

AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

Test Condition

VCC (V)

Min

Typ.

Max

Min

Max

Unit

1.8

± 0.15

2.0

5.2

9.2

2.0

9.6

2.5

± 0.2

1.5

3.5

5.7

1.5

6.1

3.3

± 0.3

1.0

2.8

4.1

1.0

4.5

tpZL

CL = 50 pF, RL = 500 Ω

5.0

± 0.5

0.5

2.2

3.4

0.5

3.6

1.8

± 0.15

2.0

4.6

9.2

2.0

9.6

2.5

± 0.2

1.5

3.2

5.7

1.5

6.1

3.3

± 0.3

1.0

2.4

4.1

1.0

4.5

Propagation delay time

tpLZ

CL = 50 pF, RL = 500 Ω

5.0

± 0.5

0.5

1.6

3.4

0.5

3.6

ns

Input capacitance

CIN

⎯

0~5.5

⎯

3.0

⎯

pF

Output capacitance

COUT

⎯

0~5.5

⎯

2.5

⎯

pF

3.3

⎯

6.9

⎯

Power dissipation

capacitance

CPD

(Note 4)

5.5

⎯

13

⎯

pF

Note 4: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

ICC (opr.) = CPD･VCC･fIN + ICC/2

Test Circuit

AC Waveform

Output

VCC × 2

RL

CL

RL

Input

90%

tr 3 ns

50%

10%

50%

VCC

GND

50%

tpZL

VOL + 0.3 V

tpLZ

Output

VOH

VOL

tf 3 ns

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