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TC59LM836DKG-30 Folha de dados(PDF) 5 Page - Toshiba Semiconductor |
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TC59LM836DKG-30 Folha de dados(HTML) 5 Page - Toshiba Semiconductor |
5 / 65 page TC59LM836DKG-30,-33,-40 2005-03-07 5/65 Rev 1.3 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT NOTES VDD Power Supply Voltage −0.3~ 3.3 V VDDQ Power Supply Voltage (for DQ buffer) −0.3~VDD+ 0.3 V VIN Input Voltage −0.3~VDD+ 0.3 V VOUT Output and DQ pin Voltage −0.3~VDDQ + 0.3 V VREF Input Reference Voltage −0.3~VDD+ 0.3 V Topr Operating Temperature (case) 0~85 °C Tstg Storage Temperature −55~150 °C Tsolder Soldering Temperature (10 s) 260 °C PD Power Dissipation 2.5 W IOUT Short Circuit Output Current ±50 mA Caution: Conditions outside the limits listed under “ABSOLUTE MAXIMUM RATINGS” may cause permanent damage to the device. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to “ABSOLUTE MAXIMUM RATINGS” conditions for extended periods may affect device reliability. RECOMMENDED DC, AC OPERATING CONDITIONS (Notes: 1)(TCASE = 0~85°C) SYMBOL PARAMETER MIN TYP. MAX UNIT NOTES VDD Power Supply Voltage 2.375 2.5 2.625 V VDDQ Power Supply Voltage (for DQ buffer) 1.4 1.9 V VREF Reference Voltage VDDQ/2 × 95% VDDQ/2 VDDQ/2 × 105% V 2 VIH (DC) Input DC High Voltage VREF + 0.125 VDDQ + 0.2 V 5 VIL (DC) Input DC Low Voltage −0.1 VREF − 0.125 V 5 VICK (DC) Differential Clock DC Input Voltage −0.1 VDDQ + 0.1 V 10 VID (DC) Differential Input Voltage. CLK and CLK inputs (DC) 0.4 VDDQ + 0.2 V 7, 10 VIH (AC) Input AC High Voltage VREF + 0.2 VDDQ + 0.2 V 3, 6 VIL (AC) Input AC Low Voltage −0.1 VREF − 0.2 V 4, 6 VID (AC) Differential Input Voltage. CLK and CLK inputs (AC) 0.55 VDDQ + 0.2 V 7, 10 VX (AC) Differential AC Input Cross Point Voltage VDDQ/2 − 0.125 VDDQ/2 + 0.125 V 8, 10 VISO (AC) Differential Clock AC Middle Level VDDQ/2 − 0.125 VDDQ/2 + 0.125 V 9, 10 |
Nº de peça semelhante - TC59LM836DKG-30 |
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Descrição semelhante - TC59LM836DKG-30 |
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