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TLP3250 Folha de dados(PDF) 2 Page - Toshiba Semiconductor

Nome de Peças TLP3250
Descrição Electrónicos  Logic IC Testers / Memory Testers
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP3250 Folha de dados(HTML) 2 Page - Toshiba Semiconductor

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TLP3250
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
30
mA
Forward current derating (Ta >= 25°C)
ΔIF/°C
−0.3
mA/°C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off-State output terminal voltage
VOFF
20
V
On-State current
ION
200
mA
On-State current derating (Ta >= 25°C)
ΔION/°C
−2.0
mA/°C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−40~125
°C
Operating temperature range
Topr
−20~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min., R.H. <= 60%) (Note 1)
BVS
1500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Forward current
IF
20
mA
Operating temperature
Topr
25
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 5 mA
1.15
1.30
1.45
V
Reverse current
IR
VR = 5 V
10
μA
Capacitance
CT
V
= 0, f = 1 MHz
30
pF
Off-state current
IOFF
VOFF = 20 V
10
200
pA
Capacitance
COFF
V
= 0, f = 100 MHz, t<1s
0.8
1.1
pF


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