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TC74HC4051AP Folha de dados(PDF) 6 Page - Toshiba Semiconductor

Nome de Peças TC74HC4051AP
Descrição Electrónicos  CMOS Digital Integrated Circuit Silicon Monolithic
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC4051AP Folha de dados(HTML) 6 Page - Toshiba Semiconductor

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TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT
2007-10-01
6
Electrical Characteristics
DC Characteristics
Test Condition
Ta = 25°C
Ta =
−40 to 85°C
Characteristics
Symbol
VEE (V) VCC (V)
Min
Typ.
Max
Min
Max
Unit
High-level control
input voltage
VIHC
⎯
2.0
4.5
6.0
1.50
3.15
4.20
⎯
⎯
⎯
⎯
⎯
⎯
1.50
3.15
4.20
⎯
⎯
⎯
V
Low-level control
input voltage
VILC
⎯
2.0
4.5
6.0
⎯
⎯
⎯
⎯
⎯
⎯
0.50
1.35
1.80
⎯
⎯
⎯
0.50
1.35
1.80
V
VIN = VILC or VIHC
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
−4.5
−6.0
4.5
4.5
6.0
⎯
⎯
⎯
85
55
50
180
120
100
⎯
⎯
⎯
225
150
125
ON resistance
RON
VIN = VILC or VIHC
VI/O = VCC or VEE
II/O ≤ 2 mA
GND
GND
−4.5
−6.0
2.0
4.5
4.5
6.0
⎯
⎯
⎯
⎯
150
70
50
45
⎯
150
100
80
⎯
⎯
⎯
⎯
⎯
190
125
100
Ω
Difference of ON
resistance between
switches
ΔRON
VIN = VILC or VIHC
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
−4.5
−6.0
4.5
4.5
6.0
⎯
⎯
⎯
10
5
5
30
12
10
⎯
⎯
⎯
35
15
12
Ω
Input/output leakage
current
(switch off)
IOFF
VOS = VCC or GND
VIS = GND or VCC
VIN = VILC or VIHC
GND
−6.0
6.0
6.0
⎯
⎯
⎯
⎯
±60
±100
⎯
⎯
±600
±1000
nA
Switch input leakage
current
(switch on)
IIZ
VOS = VCC or GND
VIN = VILC or VIHC
GND
−6.0
6.0
6.0
⎯
⎯
⎯
⎯
±60
±100
⎯
⎯
±600
±1000
nA
Control input current
IIN
VIN = VCC or GND
GND
6.0
⎯
⎯
±0.1
⎯
±1.0
μA
Quiescent supply
current
ICC
VIN = VCC or GND
GND
−6.0
6.0
6.0
⎯
⎯
⎯
⎯
4.0
8.0
⎯
⎯
40.0
80.0
μA


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