2SA1162

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1162

Audio Frequency General Purpose Amplifier Applications

= 0.95 (typ.)

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SC2712

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−150

mA

Base current

−30

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

−0.1

μA

Emitter cut-off current

⎯

⎯

−0.1

μA

DC current gain

(Note)

70

⎯

400

Collector-emitter saturation voltage

⎯

−0.1

−0.3

V

Transition frequency

80

⎯

⎯

MHz

Collector output capacitance

⎯

4

7

pF

Noise figure

NF

Rg

= 10 kΩ,

⎯

1.0

10

dB

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)