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2SA1314 Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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2SA1314 Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA1314 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO VEB = −6 V, IC = 0 ― ― −100 nA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −6 ― ― V hFE (1) (Note 4) VCE = −1 V, IC = −0.5 A 140 ― 600 DC current gain hFE (2) VCE = −1 V, IC = −4 A 60 120 ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −50 mA ― −0.2 −0.5 V Base-emitter voltage VBE VCE = −1 V, IC = −2 A ― −0.83 −1.5 V Transition frequency fT VCE = −1 V, IC = −0.5 A ― 140 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 50 ― pF Note 4: hFE (1) classification A: 140 to 280, B: 200 to 400, C: 300 to 600 Marking T Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator |
Nº de peça semelhante - 2SA1314_07 |
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Descrição semelhante - 2SA1314_07 |
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