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FP50R12KE3 Folha de dados(PDF) 3 Page - eupec GmbH |
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3 / 11 page Technische Information / Technical Information IGBT-Module IGBT-Modules FP50R12KE3 Vorläufige Daten Preliminary data Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Modulinduktivität stray inductance module LσCE - - 100 nH Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip TC = 25°C RCC'+EE' - 7 - m Ω Diode Wechselrichter/ Diode Inverter min. typ. max. Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 50 A VF - 1,65 2,2 V forward voltage VGE = 0V, Tvj = 125°C, IF = 50 A - 1,65 - V Rückstromspitze IF=INenn, - diF/dt = 1200 A/µs peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 600 V IRM - 51 - A VGE = -10V, Tvj = 125°C, VR = 600 V - 50 - A Sperrverzögerungsladung IF=INenn, - diF/dt = 1200 A/µs recovered charge VGE = -10V, Tvj = 25°C, VR = 600 V Qr - 6,2 - µAs VGE = -10V, Tvj = 125°C, VR = 600 V - 12 - µAs Abschaltenergie pro Puls IF=INenn, - diF/dt = 1200 A/µs reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 600 V ERQ - 2,1 - mWs VGE = -10V, Tvj = 125°C, VR = 600 V - 4,4 - mWs Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max. Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 40 A VCE sat - 1,8 2,3 V collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 40 A - 2,15 - V Gate-Schwellenspannung gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 1,5 mA VGE(TO) 5,0 5,8 6,5 V Eingangskapazität input capacitance f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V Cies - 2,5 - nF Kollektor-Emitter Reststrom collector-emitter cut off current VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES - 5,0 - mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA Schaltverluste und -bedingungen Switching losses and conditions Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max. Durchlaßspannung Tvj = 25°C, IF = 40 A VF - 2,35 2,8 V forward voltage Tvj = 125°C, IF = 40 A - 2,55 - V Schaltverluste und -bedingungen Switching losses and conditions NTC-Widerstand/ NTC-Thermistor min. typ. max. Nennwiderstand rated resistance TC = 25°C R25 - 5 - k Ω Abweichung von R100 deviation of R100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung power dissipation TC = 25°C P25 20 mW B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K siehe Wechselrichter in Dbl FP40R12KE3 see inverter in datasheet FP40R12KE3 siehe Wechselrichter in Dbl FP15R12KE3 see inverter in datasheet FP15R12KE3 3(11) DB-PIM-IGBT3_1.xls |
Nº de peça semelhante - FP50R12KE3 |
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Descrição semelhante - FP50R12KE3 |
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