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TD62008AFG Folha de dados(PDF) 2 Page - Toshiba Semiconductor |
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TD62008AFG Folha de dados(HTML) 2 Page - Toshiba Semiconductor |
2 / 10 page TD62008APG/AFG 2007-10-16 2 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Output Sustaining Voltage VCE (SUS) −0.5 ~ 50 V Output Current IOUT 400 mA / ch Input Voltage VIN −40 ~ 40 V Clamp Diode Reverse Voltage VR 50 V Clamp Diode Forward Current IF 400 mA APG 1.47 Power Dissipation AFG PD 0.625 (Note) W Operating Temperature Topr −40 ~ 85 °C Storage Temperature Tstg −55 ~ 150 °C Note: On Glass Epoxy PCB (30 × 30 × 1.6 mm Cu 50%) Operating Conditions (Ta = −40 ~ 85°C) CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT Output Sustaining Voltage VCE (SUS) 0 ― 50 V DC 1 Circuit, Tpw = 25%, Duty = 40% 0 ― 400 Output Current IOUT Tpw = 25 ms, Duty = 10%, 7 Circuits 0 ― 200 mA Input Voltage VIN −35 ― 35 V Clamp Diode Reverse Voltage VR ― ― 50 V Clamp Diode Forward Current IF ― ― 400 mA APG ― ― 0.52 Power Dissipation AFG PD Ta = 85°C (Note) ― ― 0.325 W Note: On Glass Epoxy PCB (30 × 30 × 1.6 mm Cu 50%) |
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