BD242BFP datasheet(2/4 Pages) STMICROELECTRONICS

Nome de Peças	BD242BFP

Descrição Electrónicos	COMPLEMENTARY SILICON POWER TRANSISTORS

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

5.3

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEO

Collect or Cut-off

Current (IB =0)

VCE =60 V

0.3

mA

ICES

Collect or Cut-off

Current (VBE =0)

VCE =80 V

0.2

mA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

1

mA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =30 mA

80

V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =3 A

IB = 0.6 A

1.2

V

VBE(ON)

∗ Base-Emitter Voltage

IC =3 A

VCE =4 V

1.8

V

hFE*

DC Current G ain

IC =1 A

VCE =4 V

IC =3 A

VCE =4 V

25

10

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

For PNP types voltage and current values are negative.

BD241BFP / BD242BFP

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